Enhanced passivation at amorphous/crystalline silicon interface and suppressed Schottky barrier by deposition of microcrystalline silicon emitter layer in silicon heterojunction solar cells

Applied Physics Letters

Volumn 104, Issue 11, 2014, Pages

  Madani Ghahfarokhi, Omid ^a   Von Maydell, Karsten ^a   Agert, Carsten ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CO-EFFICIENT; CRYSTALLINE SILICONS; CURRENT INCREASE; LOW WORK FUNCTION; SCHOTTKY BARRIERS; SILICON HETEROJUNCTIONS; SILICON INTERFACE; TRANSPARENT CONDUCTIVE OXIDES;

ELECTRIC PROPERTIES; HETEROJUNCTIONS; PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SOLAR CELLS;

SILICON;

EID: 84897851162     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4868726     Document Type: Article

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