Investigation of gap states in phosphorous-doped ultra-thin a-Si:H by near-UV photoelectron spectroscopy

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2138-2143

  Korte, L ^a   Schmidt, M ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Amorphous semiconductors; Band structure; Electrical and electronic properties; Silicon; Solar cells

Indexed keywords

CRYSTAL DEFECTS; DANGLING BONDS; ENERGY GAP; EXCITED STATES; FERMI LEVEL; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DOPING;

CONDUCTION BAND; LIGHT EXCITATION; RECOMBINATION PATHWAY;

AMORPHOUS SEMICONDUCTORS;

EID: 42649116793     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.09.010     Document Type: Article

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