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Volumn 102, Issue 23, 2013, Pages

Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICON SURFACES; DEFECT CREATION; HIGH-EFFICIENCY; HIGH-QUALITY INTERFACE; HYDROGEN PLASMA TREATMENTS; PASSIVATION LAYER; SILICON HETEROJUNCTIONS; SILICON INTERFACE;

EID: 84879106561     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811253     Document Type: Article
Times cited : (94)

References (28)
  • 27
    • 0026138277 scopus 로고
    • 10.1016/0921-4526(91)90111-Q
    • W. Beyer, Physica B 170, 105-114 (1991). 10.1016/0921-4526(91)90111-Q
    • (1991) Physica B , vol.170 , pp. 105-114
    • Beyer, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.