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Volumn 90, Issue 18-19, 2006, Pages 3385-3393

Mechanism of hydrogen interaction with the growing silicon film

Author keywords

Layer by layer deposition; Mass spectroscopy; Microcrystalline silicon; Thin film; VHF PECVD

Indexed keywords

CRYSTALLINE MATERIALS; ETCHING; HYDROGEN; REACTION KINETICS; SILICON;

EID: 33748457518     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2005.10.025     Document Type: Article
Times cited : (6)

References (8)
  • 3
    • 33748473098 scopus 로고    scopus 로고
    • E.A.G. Hamers, Plasma deposition of hydrogenated amorphous silicon: Plasma processes, ion fluxes and material properties, Ph.D. Thesis, Utrecht University, 1998.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.