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Applied Physics A: Materials Science and Processing

Volumn 114, Issue 3, 2014, Pages 765-768

Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting

(7) Liu, Kong a Qu, Shengchun a Zhang, Xinhui a Tan, Furui a Bi, Yu a Lu, Shudi a Wang, Zhanguo a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BANDGAP ABSORPTION; BLACK SILICON; CHEMICAL ETCHING; SILICON NANOWIRES; SILICON SUBSTRATES; WAVELENGTH RANGES; WAVELENGTH REGIONS;

ETCHING; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SULFUR;

SILICON;

EID: 84897669126 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-013-7682-7 Document Type: Article

Times cited : (9)

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