The effects of a thin film dopant precursor on the structure and properties of femtosecond-laser irradiated silicon

Applied Physics A: Materials Science and Processing

Volumn 105, Issue 4, 2011, Pages 795-800

  Smith, Matthew J ^a   Winkler, Mark ^b   Sher, Meng Ju ^b   Lin, Yu Ting ^b   Mazur, Eric ^b   Gradečak, Silvija ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTANCE; DOPANT DISTRIBUTION; DOPANT INCORPORATION; DOPANT PRECURSORS; DOPING PROCESS; FEMTOSECOND (FS) LASER; FS-LASER; GASEOUS PRECURSORS; LASER-MATERIAL INTERACTIONS; METASTABLE ALLOY; P-N DIODE; SELENIUM THIN FILMS; SILICON SUBSTRATES; STRUCTURAL CHARACTERIZATION; STRUCTURE AND PROPERTIES; SUB-BANDS; SURFACE STRUCTURING;

IRRADIATION; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SULFUR; THIN FILMS;

INFRARED LASERS;

EID: 83555165062     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6651-2     Document Type: Article

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