Near-unity below-band-gap absorption by microstructured silicon

Applied Physics Letters

Volumn 78, Issue 13, 2001, Pages 1850-1852

  Wu, C ^a   Crouch, C H ^a   Zhao, L ^a,e   Carey, J E ^a   Younkin, R ^a   Levinson, J A ^b   Mazur, E ^c   Farrell, R M ^d   Gothoskar, P ^d   Karger, A ^d  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c HARVARD UNIVERSITY   (United States)

^d RADIATION MONITORING DEVICES INC   (United States)

^e FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035952881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1358846     Document Type: Article

References (20)

1. T. H. Her, R. J. Finlay, C. Wu, S. Deliwala, and E. Mazur, Appl. Phys. Lett. 73, 1673 (1998).
2. T. H. Her, R. J. Finlay, C. Wu, and E. Mazur, Appl. Phys. A: Mater. Sci. Process. 70, 383 (2000).
3. A. J. Pedraza, J. D. Fowlkes, and D. H. Lowndes, Appl. Phys. Lett. 74, 2322 (1999).
4. E. S. Kolesar, V. M. Bright, and D. Sowders, Thin Solid Films 270, 10 (1995).
5. E. S. Kolesar, V. M. Bright, and D. M. Sowders, Thin Solid Films 290-291, 23 (1996).
6. H. G. Craighead, R. E. Howard, and D. M. Tennant, Appl. Phys. Lett. 37, 653 (1980).
7. J. I. Gittleman, E. K. Sichel, H. W. Lehmann, and R. Widmer, Appl. Phys. Lett. 35, 742 (1979).
8. J. Zhao, A. Wang, M. Green, and F. Ferrazza, Appl. Phys. Lett. 73, 1991 (1998).
9. J. P. Zheng, K. L. Jiao, W. P. Shen, W. A. Anderson, and H. S. Kwok, Appl. Phys. Lett. 61, 459 (1992).
10. E. Chen and S. Chou, Appl. Phys. Lett. 70, 753 (1980).
11. Our previous results (1, 2) indicate that microstructure formation is independent of the doping and the crystal plane of the substrate silicon.
12. Another sample made and annealed under the same conditions shows an even greater drop in infrared absorptance than that shown in Fig. 3. Prior to annealing, we see a few percent variation in the infrared absorptance of samples made under the same conditions; we surmise that annealing enhances the underlying structural differences which produce these variations.
13. L. C. Feldman, J. W. Mayer, and S. T. Picraux, Materials Analysis by Ion Channeling (Academic, New York, 1982).
14. E. Janzen, R. Stedman, G. Grossmann, and H. G. Grimmeiss, Phys. Rev. B 29, 1907 (1984).
15. W. Fahrner and A. Goetzberger. Appl. Phys. Lett. 21, 329 (1972).
16. D. L. Camphausen, H. M. James, and R. J. Sladek, Phys. Rev. B 2, 1899 (1970).
17. C. H. Seager, P. M. Lenahan, K. L. Brower, and R. E. Mikawa, J. Appl. Phys. 58, 2704 (1985).
18. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971), p. 9.
19. M. J. Keevers and M. A. Green, Sol. Energy Mater. Sol. Cells 41/42, 195 (1996).
20. M. J. Keevers, F. W. Saris, G. C. Zhang, J. Zhao, and M. A. Green, Proceedings of the 13th European Photovoltaic Solar Energy Conference and Exhibition (1995) (unpublished).