|
Volumn 96, Issue 2, 2009, Pages 327-334
|
The role of diffusion in broadband infrared absorption in chalcogen-doped silicon
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ABSORPTANCE;
BROADBAND ABSORPTION;
CHALCOGEN;
CHALCOGENS;
DIFFUSION LENGTH;
DIFFUSION THEORY;
DOPANT DIFFUSION;
DOPED SILICON;
FEMTOSECOND LASER IRRADIATION;
GRAIN SIZE;
INFRARED LIGHT;
INFRARED PHOTODETECTOR;
ROLE OF DIFFUSION;
SILICON-BASED;
SOLUBILITY LIMITS;
SULFUR DOPING;
SURFACE LAYERS;
THERMAL-ANNEALING;
DIFFUSION;
DISSOLUTION;
DOPING (ADDITIVES);
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
INFRARED ABSORPTION;
IRRADIATION;
OPTOELECTRONIC DEVICES;
PULSED LASER APPLICATIONS;
SELENIUM;
SULFUR;
SURFACE DIFFUSION;
TELLURIUM;
TELLURIUM COMPOUNDS;
ULTRASHORT PULSES;
GAS ABSORPTION;
|
EID: 67650409977
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/s00339-009-5200-8 Document Type: Article |
Times cited : (106)
|
References (42)
|