Electronic properties investigation of silicon supersaturated with tellurium

Applied Physics A: Materials Science and Processing

Volumn 105, Issue 4, 2011, Pages 1021-1024

  Li, Xinyi ^a   Han, Peide ^a   Gao, Lipeng ^a   Mao, Xue ^a   Hu, Shaoxu ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; DOPANT CONCENTRATIONS; HALL MEASUREMENTS; HIGH DOSE; IMPLANTED LAYERS; IMPLANTED SAMPLES; IV CHARACTERISTICS; LOW DOSE; NON EQUILIBRIUM; P-N JUNCTION; THERMAL-ANNEALING; WHITE LIGHT;

CONVERSION EFFICIENCY; ELECTRIC RECTIFIERS; HALL EFFECT; ION IMPLANTATION; TELLURIUM; TELLURIUM COMPOUNDS;

ELECTRONIC PROPERTIES;

EID: 83555164983     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6537-3     Document Type: Article

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