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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 327, Issue 1, 2014, Pages 63-67

Electronic structure calculations of positron lifetimes in SiC: Self-consistent schemes and relaxation effect

(3) Wiktor, J a Jomard, G a Bertolus, M a

a IRFM (France)

Author keywords

Electronic structure calculations; Positron lifetime spectroscopy; Silicon carbide

Indexed keywords

DEFECTS; ELECTRONIC STRUCTURE; ELECTRONS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

6H-SILICON CARBIDES; DEFECT RELAXATION; ELECTRONIC STRUCTURE CALCULATIONS; FORMATION ENERGIES; POSITRON LIFETIME; POSITRON LIFETIME SPECTROSCOPY; RELAXATION EFFECT; SELF-CONSISTENT SCHEME;

SILICON CARBIDE;

EID: 84897507971 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2013.09.050 Document Type: Article

Times cited : (10)

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