Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide

Journal of Physics Condensed Matter

Volumn 16, Issue 46, 2004, Pages 8409-8419

  Lam, C H ^a   Lam, T W ^a   Ling, C C ^a   Fung, S ^a   Beling, C D ^a   De Sheng, Hang ^b   Huimin, Weng ^c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b NANJING UNIVERSITY   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON IRRADIATION; ENERGY GAP; HIGH TEMPERATURE EFFECTS; IONIZATION; POSITRONS; SEMICONDUCTOR MATERIALS;

IONIZATION ENERGY; RADIATION-RESISTANT DEVICES; VACANCY-TYPE DEFECTS;

SILICON CARBIDE;

EID: 9944221018     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/46/026     Document Type: Article

References (27)

1. Morkoç H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
2. Krause-Rehberg R and Leipner H S 1999 Positron Annihilation in Semiconductors, Defect Studies (Springer Series in Solid-State Sciences vol 127) (Berlin: Springer)
3. Puska M J and Nieminen R M 1994 Rev. Mod. Phys. 66 841
4. Brauer G, Anwand W, Nicht E-M, Kuriplach J, Šob M, Wagner N, Coleman P G, Puska M J and Korhonen T 1996Phys. Rev. B 54 2512
5. Ling C C, Deng A H, Fung S and Beling C D 2000 Appl. Phys. A 70 33
6. Ling C C, Beling C D and Fung S 2000 Phys. Rev. B 62 8016
7. Brauer G, Anwand W, Coleman P G, Knights A P, Plazaola F, Pacaud Y, Skurupa W, Störnier J and Willutzki P 1996 Phys. Rev. B 54 3084
8. Henry L, Barthe M-F, Corbel C, Desgardin P, Blondiaux G, Arpiainen S and Liszkay L 2003 Phys. Rev. B 67 115210
9. Dannefaer S, Craigen D and Kerr D 1995 Phys. Rev, B 51 1928
10. Rempel A A, Sprengel W, Blaurock K, Reichte K J, Major J and Schaefer H E 2003 Phys. Rev. Lett. 91 109602
11. Dannefaer S and Kerr D 2004 Diamond Relat. Mater. 13 157
12. Kawasuso A, Redmann F, Krause-Rehberg R, Frank T, Weidner M, Pensl G, Sperr P and Itoh H 2001 J. Appl. Phys. 90 3377
13. Arpiainen S, Saarinen K, Hautojärvi P, Henry L, Barthe M F and Corbel C 2002 Phys. Rev. B 66 75206
14. Kawasuso A, Itoh H, Okada S and Okurmura H 1996 J. Appl. Phys. 80 5639
15. Polity A, Huth S and Lausmann M 1999 Phys. Rev. B 59 10603
16. Kirkgaard P, Eldrup M, Morgenson O E and Pederson N J 1981 Comput. Phys. Commun. 23 307
17. Sörman E, Son N T, Chen W M, Kordina O, Hallin C and Janźn E 2000 Phys. Rev. B 61 2613
18. Lingner Th, Greulich-Weber S, Spaeth J-M, Gerstmann U, Rauls E, Hajnal Z, Frauenheim Th and Overhof H 2001 Phys. Rev. B 64 245212
19. Mascher P, Dannefaer S and Kerr D 1989 Phys. Rev. B 40 11764
20. Saarinen K, Hautojärvi P, Vehanen A, Krause R and Dlubek G 1989 Phys. Rev. B 39 5287
21. Puska M J, Corbel C and Nieminen R M 1990 Phys. Rev. B 41 9980
22. Manninen M and Nieminen R M 1981 Appl. Phys. A 26 93
23. Balona L A de S and Lousber J H N 1970 J. Phys. C: Solid State Phys. 3 2344
24. Zolnai Z, Son N T, Hallin C and Janzén E 2004 J. Appl. Phys. 96 2406
25. Bockstedte M, Heid M and Pankratov O 2003 Phys. Rev. B 67 193102
26. Konovalov V V, Zvanut M E and van Toi J 2003 Phys. Rev. B 68 012102
27. Wagner M, Thinh N Q, Son N T, Chen W M, Janzén E, Baranov P G, Mokhov E N, Hallin C and Lindström J L 2002 Phys. Rev. B 66 144214