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Volumn 277, Issue , 2012, Pages 77-79
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Methodological aspects of the GW calculation of the carbon vacancy in 3C-SiC
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Author keywords
Ab initio calculations; Point defects; Silicon carbide
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Indexed keywords
AB INITIO CALCULATIONS;
BAND-GAP PROBLEM;
CARBON VACANCY;
GW APPROXIMATION;
GW CALCULATIONS;
GW METHOD;
METHODOLOGICAL ASPECTS;
NEGATIVE-U;
RELAXATION ENERGIES;
SHALLOW DONORS;
POINT DEFECTS;
SILICON CARBIDE;
CARBON;
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EID: 84858338687
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2011.12.052 Document Type: Article |
Times cited : (17)
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References (18)
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