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Volumn 277, Issue , 2012, Pages 77-79

Methodological aspects of the GW calculation of the carbon vacancy in 3C-SiC

Author keywords

Ab initio calculations; Point defects; Silicon carbide

Indexed keywords

AB INITIO CALCULATIONS; BAND-GAP PROBLEM; CARBON VACANCY; GW APPROXIMATION; GW CALCULATIONS; GW METHOD; METHODOLOGICAL ASPECTS; NEGATIVE-U; RELAXATION ENERGIES; SHALLOW DONORS;

EID: 84858338687     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2011.12.052     Document Type: Article
Times cited : (17)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.