Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

Applied Physics A: Materials Science and Processing

Volumn 67, Issue 2, 1998, Pages 209-212

  Kawasuso, A ^a   Itoh, H ^a   Morishita, N ^a   Yoshikawa, M ^a   Ohshima, T ^a   Nashiyama, I ^a   Okada, S ^a   Okumura, H ^b   Yoshida, S ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON IRRADIATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRON TRAPS; POSITRONS; SILICON CARBIDE;

POSITRON ANNIHILATION; POSITRON LIFETIME MEASUREMENTS; TRAPPING COEFFICIENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032139518     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050759     Document Type: Article

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