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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 668-670

Negatively charged vacancy defects in 6H-SiC after low-energy proton implantation and annealing

(10) Barthe, M F a Britton, D T b Corbel, C a Hempel, A b Henry, L a Desgardin, P a Bauer Kugelmann, W c Kogel G c Sperr, P c Triftshauser W c

a Centre National de la Recherche Scientifique (France)

b UNIVERSITY OF CAPE TOWN (South Africa)

c BUNDESWEHR UNIVERSITY MUNICH (Germany)

Author keywords

Proton implantation; Silicon carbide; Slow positron annihilation; Vacancies defects

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ENERGY GAP; ION IMPLANTATION; IONIZATION OF SOLIDS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

PROTON IMPLANTATION; VACANCY DEFECTS;

SILICON CARBIDE;

EID: 0035675493 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00786-4 Document Type: Article

Times cited : (4)

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