Positron study of electron irradiation-induced vacancy defects in SiC

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 350-353

  Kawasuso, A ^a   Yoshikawa, M ^a   Itoh, H ^a   Krause Rehberg, R ^b   Redmann, F ^b   Higuchi, T ^c   Betsuyaku, K ^c  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c MIZUHO INFORMATION AND RESEARCH INSTITUTE   (Japan)

Author keywords

Positron annihilation; SiC

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DOPPLER EFFECT; ELECTRON IRRADIATION; POSITRON ANNIHILATION SPECTROSCOPY;

3C-SIC ISOLATED SILICON VACANCIES; CARBON-VACANCY-CARBON-ANTISITE COMPLEXES; POSITRON TRAPPING; SILICON-VACANCY-NITROGEN PAIRS;

SILICON CARBIDE;

EID: 33645142949     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.090     Document Type: Conference Paper

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