Electrically stable, solution-processed amorphous oxide IZO thin-film transistors through a UV-ozone assisted sol-gel approach

IEEE Transactions on Electron Devices

Volumn 61, Issue 4, 2014, Pages 1093-1100

  Singh, Thokchom Birendra ^a   Jasieniak, Jacek Jaroslaw ^a   De Oliveira Tozi, Leonardo ^a   Easton, Christopher David ^a   Bown, Mark ^a  

^a CSIRO   (Australia)

Author keywords

Active matrix organic light emitting diodes (AMOLEDs); Amorphous oxide semiconductors; Charge carriers mobility; High uniformity

Indexed keywords

FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE FILMS; OZONE; SOL-GELS; THIN FILM TRANSISTORS;

AMOLEDS; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); CHARGE CARRIERS MOBILITY; HIGH UNIFORMITY; PROCESSING TEMPERATURE; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS; TRADITIONAL APPROACHES;

AMORPHOUS FILMS;

EID: 84897454339     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2303796     Document Type: Article

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