-
2
-
-
0002526341
-
Experimental researches in electricity
-
Faraday, M. Experimental researches in electricity. Phil. Trans. R. Soc. Lond. 122, 163-194 (1832).
-
(1832)
Phil. Trans. R. Soc. Lond.
, vol.122
, pp. 163-194
-
-
Faraday, M.1
-
3
-
-
33744756088
-
DelModo di render sensibilissima la più debole elettricità sia naturale, sia artificiale
-
Volta, A. DelModo di Render Sensibilissima la più Debole Elettricità sia Naturale, sia Artificiale. Phil. Trans. R. Soc. Lond. 72, 237-33. (1782).
-
Phil. Trans. R. Soc. Lond.
, vol.72
, pp. 237-333
-
-
Volta, A.1
-
4
-
-
84860215095
-
Two centuries of memristors
-
Prodromakis, T., Toumazou, C. & Chua, L. Two centuries of memristors. Nat. Mater. 11, 478-481 (2012).
-
(2012)
Nat. Mater.
, vol.11
, pp. 478-481
-
-
Prodromakis, T.1
Toumazou, C.2
Chua, L.3
-
5
-
-
0015127532
-
Memristor-The missing circuit element
-
Chua, L. Memristor-The missing circuit element. IEEE Trans. Circuit Theory 18, 507-519 (1971).
-
(1971)
IEEE Trans. Circuit Theory
, vol.18
, pp. 507-519
-
-
Chua, L.1
-
6
-
-
0016918810
-
Memristive devices and systems
-
Chua, L. O.&Kang, S. M. Memristive devices and systems. Proc. IEEE 64, 209-223 (2009).
-
(2009)
Proc. IEEE
, vol.64
, pp. 209-223
-
-
Chua, L.O.1
Kang, S.M.2
-
7
-
-
79952950219
-
Resistance switching memories are memristors
-
Chua, L. Resistance switching memories are memristors. Appl. Phys. A 102, 765-783 (2011).
-
(2011)
Appl. Phys. A
, vol.102
, pp. 765-783
-
-
Chua, L.1
-
8
-
-
70349684961
-
Circuit elements with memory: Memristors memcapacitors and meminductors
-
Di Ventra, M., Pershin, Y. V. & Chua, L. O. Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors. Proc. IEEE 97, 1717-1724 (2009).
-
(2009)
Proc. IEEE
, vol.97
, pp. 1717-1724
-
-
Di Ventra, M.1
Pershin, Y.V.2
Chua, L.O.3
-
9
-
-
35748974883
-
Nanoionics-based resistive switching memories
-
Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 6, 833-840 (2007).
-
(2007)
Nat. Mater.
, vol.6
, pp. 833-840
-
-
Waser, R.1
Aono, M.2
-
10
-
-
35748932911
-
Nanoelectronics from the bottom up
-
Lu, W. & Lieber, C. M. Nanoelectronics from the bottom up. Nat. Mater. 6, 841-850 (2007).
-
(2007)
Nat. Mater.
, vol.6
, pp. 841-850
-
-
Lu, W.1
Lieber, C.M.2
-
11
-
-
43049126833
-
The missing memristor found
-
Strukov, D. B. et al. The missing memristor found. Nature 453, 80-83 (2008).
-
(2008)
Nature
, vol.453
, pp. 80-83
-
-
Strukov, D.B.1
-
13
-
-
0000020095
-
Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition
-
Kim, Y. et al. Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition. Appl. Phys. Lett. 78, 934 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 934
-
-
Kim, Y.1
-
14
-
-
33144463587
-
Memory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-kgate dielectric
-
Lee, P. F. et al.Memory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-kgate dielectric. Nanotechnology 17, 1202-1206 (2006).
-
(2006)
Nanotechnology
, vol.17
, pp. 1202-1206
-
-
Lee, P.F.1
-
15
-
-
0033349103
-
Analysis of a hysteretic circuit containing an iron-cored inductor and a semiconductor switch
-
Matsuo, T., Okumura, K. & Kishima, A. Analysis of a hysteretic circuit containing an iron-cored inductor and a semiconductor switch. IEE Proc Circ Dev Syst 146, 176-183 (1999).
-
(1999)
IEE Proc Circ Dev Syst
, vol.146
, pp. 176-183
-
-
Matsuo, T.1
Okumura, K.2
Kishima, A.3
-
16
-
-
57349177582
-
Resonant excitations of single and two-qubit systems coupled to a tank circuit
-
Shevchenko, S. N. et al. Resonant excitations of single and two-qubit systems coupled to a tank circuit. Phys. Rev. B 78, 174527 (2008).
-
(2008)
Phys. Rev. B
, vol.78
, pp. 174527
-
-
Shevchenko, S.N.1
-
17
-
-
79851501719
-
Memory effects in complex materials and nanoscale systems
-
Pershin, Y. V. & Di Ventra, M. Memory effects in complex materials and nanoscale systems. Adv. Phys. 60, 145-227 (2011).
-
(2011)
Adv. Phys.
, vol.60
, pp. 145-227
-
-
Pershin, Y.V.1
Di Ventra, M.2
-
18
-
-
82955219638
-
Pinched hysteretic loops of ideal memristors memcapacitors and meminductors must be 'self-crossing
-
Biolek, D., Biolek, Z. & BIOLKOVÁ , V. Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be 'self-crossing'. Electron. Lett. 47, 1385-1387 (2011).
-
(2011)
Electron. Lett.
, vol.47
, pp. 1385-1387
-
-
Biolek, D.1
Biolek, Z.2
Biolková, V.3
-
19
-
-
84877754319
-
Nanobatteries in redox-based resistive switches require extension of memristor theory
-
Valov, I. et al.Nanobatteries in redox-based resistive switches require extension of memristor theory. Nat. Commun. 4, 1771-9 (2013).
-
(2013)
Nat. Commun.
, vol.4
, pp. 1771-1779
-
-
Valov, I.1
-
20
-
-
84855246538
-
Memory materials: A unifying description
-
Di Ventra, M. & Pershin, Y. V. Memory materials: a unifying description. Mater. Today 14, 584-591 (2011).
-
(2011)
Mater. Today
, vol.14
, pp. 584-591
-
-
Di Ventra, M.1
Pershin, Y.V.2
-
23
-
-
84872363289
-
Resistive switching of oxygen enhanced TiO2 thin-film devices
-
Salaoru, I., Prodromakis, T., Khiat, A. & Toumazou, C. Resistive switching of oxygen enhanced TiO2 thin-film devices. Appl. Phys. Lett. 102, 013506 (2013).
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 013506
-
-
Salaoru, I.1
Prodromakis, T.2
Khiat, A.3
Toumazou, C.4
-
25
-
-
33748875999
-
Electric-pulse-induced capacitance change effect in perovskite oxide thin films
-
Liu, S., Wu, N., Ignatiev, A. & Li, J. Electric-pulse-induced capacitance change effect in perovskite oxide thin films. J. Appl. Phys. 100, 056101 (2006).
-
(2006)
J. Appl. Phys.
, vol.100
, pp. 056101
-
-
Liu, S.1
Wu, N.2
Ignatiev, A.3
Li, J.4
-
26
-
-
84883191225
-
Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
-
Yan, Z. B. &Liu, J. M. Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures. Sci. Rep. 3, 02482 (2013).
-
(2013)
Sci. Rep.
, vol.3
, pp. 02482
-
-
Yan, Z.B.1
Liu, J.M.2
-
27
-
-
28444445912
-
Direct resistance profile for an electrical pulse induced resistance change device
-
Chen, X., Wu, N. J., Strozier, J. & Ignatiev, A. Direct resistance profile for an electrical pulse induced resistance change device. Appl. Phys. Lett. 87, 2139843 (2005).
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 2139843
-
-
Chen, X.1
Wu, N.J.2
Strozier, J.3
Ignatiev, A.4
-
28
-
-
76649133422
-
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
-
Kwon, D.-H. et al.Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nature Nanotech 5, 148-153 (2010).
-
(2010)
Nature Nanotech
, vol.5
, pp. 148-153
-
-
Kwon, D.-H.1
-
29
-
-
79956064739
-
Nanofilamentary resistive switching in binary oxide system; A review on the present status and outlook
-
Kim, K. M., Jeong, D. S. & Hwang, C. S. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook. Nanotechnology 22, 254002 (2011).
-
(2011)
Nanotechnology
, vol.22
, pp. 254002
-
-
Kim, K.M.1
Jeong, D.S.2
Hwang, C.S.3
-
30
-
-
83455172683
-
AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory
-
Yu, S., Jeyasingh, R.,Wu, Y. & Philip Wong, H. S. AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory. Appl. Phys. Lett. 99, 232105-232105 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.99
, pp. 232105-232105
-
-
Yu, S.1
Jeyasingh, R.2
Wu, Y.3
Philip, W.H.S.4
-
32
-
-
77951572497
-
Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy
-
Lee, M. H. et al. Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy. Appl. Phys. Lett. 96, 152909 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 152909
-
-
Lee, M.H.1
-
33
-
-
84876997812
-
Analytical computation of the area of pinched hysteresis loops of ideal mem-elements
-
Biolek, Z., Biolek, D. & BIOLKOVÁ , V. Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements. Radioengineering 22, 132-135 (2013).
-
(2013)
Radioengineering
, vol.22
, pp. 132-135
-
-
Biolek, Z.1
Biolek, D.2
Biolková, V.3
-
34
-
-
84873150180
-
Computing areas of pinched hysteresis loops of mem-systems in OrCAD PSPICE
-
Biolek, D., Biolek, Z., Biolková, V. & Kolka, Z. Computing Areas of Pinched Hysteresis Loops of Mem-Systems in OrCAD PSPICE. Appl. Mech. Mater. 278, 1081-1090 (2012).
-
(2012)
Appl. Mech. Mater.
, vol.278
, pp. 1081-1090
-
-
Biolek, D.1
Biolek, Z.2
Biolková, V.3
Kolka, Z.4
-
35
-
-
77956380614
-
Memristive adaptive filters
-
Driscoll, T. et al.Memristive adaptive filters. Appl. Phys. Lett. 97, 093502-093503 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 093502-093503
-
-
Driscoll, T.1
-
36
-
-
84872962355
-
A scalable neuristor built with Mott memristors
-
Pickett, M. D., Medeiros-Ribeiro, G. & Williams, R. S. A scalable neuristor built with Mott memristors. Nat. mater. 12, 114-117 (2013).
-
(2013)
Nat. Mater.
, vol.12
, pp. 114-117
-
-
Pickett, M.D.1
Medeiros-Ribeiro, G.2
Williams, R.S.3
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