Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

Scientific Reports

Volumn 3, Issue , 2013, Pages

  Yan, Z B ^a   Liu, J M ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

METAL; OXIDE;

CHEMISTRY; DATA STORAGE DEVICE; DEVICE FAILURE ANALYSIS; DEVICES; ELECTRIC CAPACITANCE; ELECTRONICS; EQUIPMENT DESIGN; IMPEDANCE; MATERIALS TESTING; STATIC ELECTRICITY; ARTICLE; EQUIPMENT; EQUIPMENT FAILURE;

COMPUTER STORAGE DEVICES; ELECTRIC CAPACITANCE; ELECTRIC IMPEDANCE; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; METALS; OXIDES; STATIC ELECTRICITY;

EID: 84883191225     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep02482     Document Type: Article

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