Growth mechanisms study of microcrystalline silicon deposited by SiH 4/H2 plasma using tailored voltage waveforms

Journal of Applied Physics

Volumn 115, Issue 8, 2014, Pages

  Bruneau, B ^a   Wang, J ^a,b   Dornstetter, J C ^a,c   Johnson, E V ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c TOTAL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION BOMBARDMENT; MICROCRYSTALLINE SILICON; MORPHOLOGY; SILANES; SPECTROSCOPIC ELLIPSOMETRY; SURFACE MORPHOLOGY;

ENERGY THRESHOLDS; GROWTH MECHANISMS; HYDROGENATED MICROCRYSTALLINE SILICON; ION BOMBARDMENT ENERGY; NON-SINUSOIDAL WAVEFORMS; REAL TIME SPECTROSCOPIC ELLIPSOMETRY; STEPWISE INCREASE; SURFACE DISPLACEMENT;

MICROCRYSTALS;

EID: 84896788791     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4866693     Document Type: Article

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