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Volumn 358, Issue 17, 2012, Pages 1974-1977
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Hydrogenated microcrystalline silicon thin films deposited by RF-PECVD under low ion bombardment energy using voltage waveform tailoring
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Author keywords
Chemical vapour deposition; Ion bombardment; Plasma; Silicon
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Indexed keywords
A-SI:H;
BONDING CHARACTER;
CHEMICAL VAPOUR DEPOSITION;
CRYSTALLINITIES;
DILUTION RATIO;
EXCITATION VOLTAGE;
FILM DENSITY;
HYDROGENATED MICROCRYSTALLINE SILICON;
ION BOMBARDMENT ENERGY;
MATERIAL PROPERTY;
PROCESS PARAMETERS;
RAMAN SCATTERING SPECTRA;
RAMAN SCATTERING SPECTROSCOPY;
RF-PECVD;
RF-POWER;
SILICON THIN FILM;
VOLTAGE WAVEFORMS;
WAVE FORMS;
AMORPHOUS SILICON;
CHEMICAL VAPOR DEPOSITION;
FILM GROWTH;
HYDROGEN;
HYDROGEN BONDS;
ION BOMBARDMENT;
MICROCRYSTALLINE SILICON;
PLASMAS;
RAMAN SCATTERING;
SILICON;
THIN FILMS;
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EID: 84865789780
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2012.01.014 Document Type: Conference Paper |
Times cited : (42)
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References (11)
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