메뉴 건너뛰기




Volumn 358, Issue 17, 2012, Pages 1974-1977

Hydrogenated microcrystalline silicon thin films deposited by RF-PECVD under low ion bombardment energy using voltage waveform tailoring

Author keywords

Chemical vapour deposition; Ion bombardment; Plasma; Silicon

Indexed keywords

A-SI:H; BONDING CHARACTER; CHEMICAL VAPOUR DEPOSITION; CRYSTALLINITIES; DILUTION RATIO; EXCITATION VOLTAGE; FILM DENSITY; HYDROGENATED MICROCRYSTALLINE SILICON; ION BOMBARDMENT ENERGY; MATERIAL PROPERTY; PROCESS PARAMETERS; RAMAN SCATTERING SPECTRA; RAMAN SCATTERING SPECTROSCOPY; RF-PECVD; RF-POWER; SILICON THIN FILM; VOLTAGE WAVEFORMS; WAVE FORMS;

EID: 84865789780     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2012.01.014     Document Type: Conference Paper
Times cited : (42)

References (11)
  • 8
    • 84865734849 scopus 로고    scopus 로고
    • www.solayl.com


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.