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Applied Physics Letters

Volumn 104, Issue 8, 2014, Pages

Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy

(6) Kurtz, A a Hierro, A a Munoz E a Mohanta, S K b Nakamura, A b Temmyo, J b

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b SHIZUOKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR DEVICE MODELS;

ACCEPTOR LEVELS; CAPACITANCE-VOLTAGE CURVE; CAPACITANCE-VOLTAGE PROFILING; DEEP LEVEL OPTICAL SPECTROSCOPY; METAL-INSULATOR-SEMICONDUCTORS;

CAPACITANCE;

EID: 84896780676 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4866662 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.