Formation of a ZnO2 layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment

Journal of Applied Physics

Volumn 113, Issue 11, 2013, Pages

  Kashiwaba, Y ^a,b   Abe, T ^b   Nakagawa, A ^b   Niikura, I ^b   Daibo, M ^b   Fujiwara, T ^b   Osada, H ^b  

^a SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IWATE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN PEROXIDE TREATMENT; OXYGEN ATOM; PEAK SHIFT; SCAN PATTERNS; SURFACE OF SINGLE CRYSTALS; XPS MEASUREMENTS; XRD MEASUREMENTS; ZNO SUBSTRATE;

ATOMIC FORCE MICROSCOPY; OXYGEN; PHOTOELECTRONS; SINGLE CRYSTALS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

SUBSTRATES;

EID: 84875755459     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792941     Document Type: Article

References (19)

1. T. Akane, K. Sugioka, and K. Midorikawa, J. Vac. Sci. Technol. B 18, 1406 (2000). 10.1116/1.591479
2. J. M. Lee, K. K. Kim, S. J. Park, and W. K. Choi, Appl. Phys. Lett. 78, 3842 (2001). 10.1063/1.1379061
3. H. K. Kim, K. K. Kim, S. J. Park, T. Y. Seong, and I. Adesida, J. Appl. Phys. 94, 4225 (2003). 10.1063/1.1604475
4. H. von Wenckstern, E. M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, and M. Grundmann, Appl. Phys. Lett. 84, 79 (2004). 10.1063/1.1638898
5. H. von Wenckstern, G. Biehne, R. A. Rahman, H. Hochmuth, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. 88, 092102 (2006). 10.1063/1.2180445
6. M. W. Allen, S. M. Dubrin, and J. B. Metson, Appl. Phys. Lett. 91, 053512 (2007). 10.1063/1.2768028
7. H. Endo, M. Sugibuchi, K. Takahashi, S. Goto, S. Sugimura, K. Hane, and Y. Kashiwaba, Appl. Phys. Lett. 90, 121906 (2007). 10.1063/1.2715100
8. B. J. Coppa, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett. 82, 400 (2003). 10.1063/1.1536264
9. K. Ip, B. P. Gila, A. H. Onstine, E. S. Lambers, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, S. Kim, J. R. LaRoche, and F. Ren, Appl. Phys. Lett. 84, 5133 (2004). 10.1063/1.1764940
10. S.-H. Kim, H.-K. Kim, and T.-Y. Seong, Appl. Phys. Lett. 86, 022101 (2005). 10.1063/1.1839285
11. M. Nakano, A. Tsukazaki, R. Y. Gunji, K. Ueno, A. Ohtomo, T. Fukumura, and M. Kawasaki, Appl. Phys. Lett. 91, 142113 (2007). 10.1063/1.2789697
12. S.-H. Kim, H.-K. Kim, and T.-Y. Seong, Appl. Phys. Lett. 86, 112101 (2005). 10.1063/1.1862772
13. C.-H. Tsai, S.-X. Lin, C.-I. Hung, C.-C. Liu, and M.-P. Houng, J. Appl. Phys. 106, 093702 (2009). 10.1063/1.3253763
14. R. Schifano, E. V. Monakhov, U. Grossner, and B. G. Svensson, Appl. Phys. Lett. 91, 193507 (2007). 10.1063/1.2806194
15. R. Schifano, E. V. Monakhov, B. G. Svensson, and S. Diplas, Appl. Phys. Lett. 94, 132101 (2009). 10.1063/1.3106052
16. S. Lee, Y. Lee, D. Y. Kim, and T. W. Kang, Appl. Phys. Lett. 96, 142102 (2010). 10.1063/1.3374890
17. A. Nakamura and J. Temmyo, J. Appl. Phys. 109, 093517 (2011). 10.1063/1.3582143
18. S. Lindoors and M. Leskelä, Int. J. Inorg. Mater. 2, 197 (2000). 10.1016/S1466-6049(00)00017-9
19. A. F. Wells, Structural Inorganic Chemistry, 4th ed. (Clarendon, Oxford, 1975), p. 197.