Synthesis and characterization of N, in co-doped MgZnO films using remote-plasma-enhanced metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 375, Issue , 2013, Pages 1-5

  Mohanta, S K ^a   Nakamura, A ^a   Temmyo, J ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

A1. Hall Effect; A1. N, In co doping; A3. RPE MOCVD; B1. MgZnO

Indexed keywords

A3. RPE-MOCVD; B1. MGZNO; BAND GAP NARROWING; CO-DOPING; CONDUCTION TYPE; HEXAGONAL WURTZITE STRUCTURE; P-TYPE CONDUCTIVITY; SYNTHESIS AND CHARACTERIZATIONS;

ANNEALING; DOPING (ADDITIVES); HOLE CONCENTRATION; VAPORS; ZINC SULFIDE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 84877310348     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.03.047     Document Type: Article

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