Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen

Applied Physics Letters

Volumn 101, Issue 12, 2012, Pages

  Muret, Pierre ^a,b   Tainoff, Dimitri ^a   Morhain, Christian ^a   Chauveau, Jean Michel ^a,c  

^a CNRS   (France)

^b UNIV GRENOBLE ALPES   (France)

^c UNIVERSITÉ CÔTE D'AZUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CAPTURE CROSS SECTIONS; DEEP-LEVELS; DONOR AND ACCEPTOR; HOMOEPITAXIAL; M-PLANE; MINORITY CARRIER; NITROGEN-DOPED; ROOM TEMPERATURE; THEORETICAL PREDICTION; VALENCE BAND EDGES; ZNO; ZNO LAYERS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; ZINC OXIDE;

NITROGEN PLASMA;

EID: 84866883069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4751857     Document Type: Article

References (35)

1. A. Janotti and C. G. Van de Walle, Rep. Prog. Phys. 72, 126501 (2009). 10.1088/0034-4885/72/12/126501
2. V. Avrutin, D. Silversmith, and H. Morkoç, Proc. IEEE 98, 1269 (2010). 10.1109/JPROC.2010.2043330
3. C. H. Park, S. B. Zhang, and Su-Huai Wei, Phys. Rev. B 66, 073202 (2002). 10.1103/PhysRevB.66.073202
4. J. L. Lyons, A. Janotti, and C. G. Van de Walle, Appl. Phys. Lett. 95, 252105 (2009). 10.1063/1.3274043
5. S. Lany and A. Zunger, Phys. Rev. B 81, 205209 (2010). 10.1103/PhysRevB.81.205209
6. A. Zeuner, H. Alves, D. M. Hofmann, B. K. Meyer, A. Hoffmann, U. Haboeck, M. Strassburg, and M. Dworzak, Phys. Status Solidi B 234, R7 (2002). 10.1002/1521-3951(200212)234:33.0.CO;2-D
7. G. Xiong, K. B. Ucer, R. T. Williams, J. Lee, D. Bhattacharryya, J. Metson, and P. Evans, J. Appl. Phys. 97, 043528 (2005). 10.1063/1.1854208
8. J. W. Sun, Y. M. Lu, Y. C. Liu, D. Z. Shen, Z. Z. Zhang, B. Yao, B. H. Li, J. Y. Zhang, D. X. Zhao, and X. W. Fan, J. Appl. Phys. 102, 043522 (2007). 10.1063/1.2772581
9. E. S. Jung, H. S. Kim, H. K. Cho, and J. H. Kim, Superlattices Microstruct. 42, 62 (2007). 10.1016/j.spmi.2007.04.033
10. L. Li, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, D. Z. Shen, X. W. Fan, and Y. M. Lu, J. Mater. Sci. 45, 4093 (2010). 10.1007/s10853-010-4497-1
11. S. Lautenschlaeger, M. Hofmann, S. Eisermann, G. Haas, M. Pinnisch, A. Laufer, and B. K. Meyer, Phys. Status Solidi B 248, 1217 (2011). 10.1002/pssb.201046516
12. D. Taïnoff, M. Al-Khalfioui, C. Deparis, B. Vinter, M. Teisseire, C. Morhain, and J.-M. Chauveau, Appl. Phys. Lett. 98, 131915 (2011). 10.1063/1.3572025
13. S. H. Park, T. Minegishi, H. J. Lee, J. S. Park, I. H. Im, T. Yao, D. C. Oh, T. Taishi, I. Yonenaga, and J. H. Chang, J. Appl. Phys. 108, 093518 (2010). 10.1063/1.3498800
14. N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, and D. C. Look, Appl. Phys. Lett. 80, 1334 (2002). 10.1063/1.1450041
15. H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, and G. Brauer, Superlattices Microstruct. 42, 14 (2007). 10.1016/j.spmi.2007.04.014
16. H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, and G. Brauer, Appl. Phys. Lett. 89, 092122 (2006). 10.1063/1.2335798
17. M. Schmidt, M. Ellguth, F. Schmidt, T. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, and W. Skorupa, Phys. Status Solidi B 247, 1220 (2010). 10.1002/pssb.200945534
18. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 38, L166 (1999). 10.1143/JJAP.38.L166
19. L. G. Wang and A. Zunger, Phys. Rev. Lett. 90, 256401 (2003). 10.1103/PhysRevLett.90.256401
20. D. Zwingel, J. Lumin. 5, 385 (1972). 10.1016/0022-2313(72)90001-4
21. J. Furthmüller, F. Hachenberg, A. Schleife, D. Rogers, F. Hosseini Teherani, and F. Bechstedt, Appl. Phys. Lett. 100, 022107 (2012). 10.1063/1.3675867
22. L. Liu, J. Xu, D. Wang, M. Jiang, S. Wang, B. Li, Z. Zhang, D. Zhao, C.-X. Shan, B. Yao, and D. Z. Shen, Phys. Rev. Lett. 108, 215501 (2012). 10.1103/PhysRevLett.108.215501
23. X. Li, B. Keyes, S. Asher, S. B. Zhang, Su-Huai Wei, T. J. Coutts, S. Limpijumnong, and C. G. Van de Walle, Appl. Phys. Lett. 86, 122107 (2005). 10.1063/1.1886256
24. Y. Cui and F. Bruneval, Appl. Phys. Lett. 97, 042108 (2010). 10.1063/1.3473762
25. D. K. Schroeder, Semiconductor Material and Device Characterization (John Wiley and Sons, Inc., Hoboken, New Jersey, USA, 2006).
26. S. Weiss and R. Kassing, Solid-State Electron. 31, 1733 (1988). 10.1016/0038-1101(88)90071-8
27. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electrons States (Academic, London, UK, 1992), Chap..
28. P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, and P. Gibart, J. Appl. Phys. 91, 2998 (2002). 10.1063/1.1433935
29. R. Pässler, Phys. Status Solidi B 85, 203 (1978). 10.1002/pssb.2220850122
30. B. K. Ridley, Solid-State Electron. 21, 1319 (1978). 10.1016/0038- 1101(78)90200-9
31. J. Pernot and P. Muret, J. Appl. Phys. 103, 023704 (2008). 10.1063/1.2830860
32. S. Lautenschlaeger, S. Eisermann, M. N. Hofmann, U. Roemer, M. Pinnisch, A. Laufer, B. K. Meyer, H. von Wenckstern, A. Lajn, F. Schmidt, M. Grundmann, J. Blaesing, and A. Krost, J. Cryst. Growth 312, 2078 (2010). 10.1016/j.jcrysgro. 2010.04.029
33. F. D. Auret, W. E. Meyer, P. J. Janse van Rensburg, M. Hayes, J. M. Nel, H. von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann, Physica B 401-402, 378 (2007). 10.1016/j.physb.2007.08.192
34. M. Schmidt, H. von Wenckstern, R. Pickenhain, and M. Grundmann, Solid-State Electron. 75, 48 (2012). 10.1016/j.sse.2012.04.043
35. S. Lany and A. Zunger, Phys. Rev. Lett. 98, 045501 (2007). 10.1103/PhysRevLett.98.045501