SCOPUS 정보 검색 플랫폼

Volumn 105, Issue , 2013, Pages 86-90

High-efficiency InGaN-based LEDs grown on patterned sapphire substrates using nanoimprinting technology

(11) Lee, Yeeu Chang a Yeh, Shiang Chih a Chou, Yen Yu a Tsai, Pei Jung b Pan, Jui Wen b Chou, Hsiu Mei c Hou, Chia Hung c Chang, Yung Yuan d Chu, Min Sheng d Wu, Cheng Hui d Ho, Chun Hsien d

a CHUNG YUAN CHRISTIAN UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c Lextar Electronics Corporation (Taiwan)

d Procrystal Technology Co Ltd (Taiwan)

Author keywords

Light extraction efficiency; Light emitting diodes; Roller imprint lithography

Indexed keywords

CHIP PROCESSING; HIGH-EFFICIENCY; IMPRINT LITHOGRAPHY; IMPRINTED MATERIALS; INDUCTIVE COUPLED PLASMA; INGAN-BASED LED; LIGHT OUTPUT; LIGHT-EXTRACTION EFFICIENCY; NANOIMPRINTING TECHNOLOGY; OPTICAL EFFICIENCY; OUTPUT POWER; PATTERNED SAPPHIRE SUBSTRATE; PDMS MOLDS; POLYDIMETHYLSILOXANE PDMS; ROLLER IMPRINTING; SAPPHIRE SUBSTRATES; SOFT POLYMERS;

EFFICIENCY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; MICROCHANNELS; MOLDS; NANOIMPRINT LITHOGRAPHY; ROLLERS (MACHINE COMPONENTS); SAPPHIRE; SILICONES; SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 84874048241 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2013.01.027 Document Type: Article

Times cited : (16)

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