SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 26, 2010, Pages

High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

(5) Huang, Hung Wen a Huang, Jhi Kai a,b Kuo, Shou Yi c Lee, Kang Yuan b Kuo, Hao Chung a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b Unilite Corporation (Taiwan)

c CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL QUALITY; EXTRACTION EFFICIENCIES; GAN BASED LED; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; LIGHT EMITTING DEVICES; LIGHT OUTPUT POWER; NANO SCALE; NANOROD ARRAYS; OUTPUT POWER; PATTERNED SAPPHIRE SUBSTRATE; PHOTONIC QUASICRYSTAL; STRONG ENHANCEMENT; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPY IMAGES;

EXTRACTION; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; NANORODS; NANOSTRUCTURED MATERIALS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 77954332804 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456385 Document Type: Article

Times cited : (50)

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