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Applied Physics A: Materials Science and Processing

Volumn 114, Issue 2, 2014, Pages 545-550

Identification of optimal ALD process conditions of Nd2O 3 on Si by spectroscopic ellipsometry

(3) Fan, Xiaojiao a Liu, Hongxia a Zhang, Xujie a

a XIDIAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT GROWTH RATES; DEPOSITION TEMPERATURES; DIELECTRIC FUNCTIONS; EVAPORATION TEMPERATURE; SATURATION CONDITIONS; TEMPERATURE REGIONS; THICKNESS UNIFORMITY; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

DEFECTS; DEPOSITION; INTERFACES (MATERIALS); OPTIMIZATION; OXIDE FILMS; SPECTROSCOPIC ELLIPSOMETRY;

ATOMIC LAYER DEPOSITION;

EID: 84893719309 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-013-7611-9 Document Type: Article

Times cited : (12)

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