Identification of electrically active defects in thin dielectric films by spectroscopic ellipsometry

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Price, J ^a   Bersuker, G ^a   Lysaght, P S ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; CHARACTERIZATION METHODS; ELECTRICALLY ACTIVE DEFECTS; FLAT-BAND VOLTAGE; HIGH-K DIELECTRIC FILMS; INTERFACIAL LAYER; OPTICALLY ACTIVE; PHOTOABSORPTIONS; PHYSICAL CHARACTERIZATION; POSITIVELY CHARGED; PROCESSING CONDITION; THIN DIELECTRIC FILM; VACUUM ULTRAVIOLET SPECTROSCOPIC ELLIPSOMETRY;

DIELECTRIC FILMS; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; ULTRAVIOLET SPECTROSCOPY;

DEFECTS;

EID: 84857822669     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3684605     Document Type: Article

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