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Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 4, 2008, Pages 918-921

Observation of interfacial electrostatic field-induced changes in the silicon dielectric function using spectroscopic ellipsometry

(6) Price, J a,c Lysaght, P S a Song, S C a Diebold, A C b An, Y Q c Downer, M C c

a SEMATECH (United States)

b STATE UNIVERSITY OF NEW YORK (United States)

c UNIVERSITY OF TEXAS AT AUSTIN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONSISTENT; CRITICAL POINTS; DIELECTRIC FUNCTIONS; ELECTRIC FIELD ENHANCEMENTS; ELECTROSTATIC FIELDS; FUNDAMENTAL ABSORPTION EDGES; HIGH-TEMPERATURE; INDUCED CHARGES; MEASURING; OXYGEN VACANCY DEFECTS; PROCESSING CONDITIONS; SECOND-HARMONIC GENERATIONS; SILICON SUBSTRATES; THIN DIELECTRIC FILMS; TRAPPING CENTERS;

ABSORPTION; CHARGE TRAPPING; DIELECTRIC FILMS; ELECTRIC FIELDS; ELLIPSOMETRY; EQUATIONS OF STATE; HAFNIUM COMPOUNDS; HARMONIC GENERATION; INJECTION (OIL WELLS); NONLINEAR OPTICS; NONMETALS; OXYGEN; OXYGEN VACANCIES; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTROSCOPIC ELLIPSOMETRY; VACANCIES;

ELECTROMAGNETIC INDUCTION;

EID: 54849414720 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200777836 Document Type: Article

Times cited : (7)

References (8)

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