Silicon monomer formation and surface patterning of si(001)-2 × 1 following tetraethoxysilane dissociative adsorption at room temperature

Journal of Physical Chemistry C

Volumn 118, Issue 4, 2014, Pages 1887-1893

  Tissot, Héloise ^a,b,c   Gallet, Jean Jacques ^a,b,c   Bournel, Fabrice ^a,b,c   Naitabdi, Ahmed ^a,b,c   Pierucci, Debora ^a,b,c   Bondino, Federica ^d   Magnano, Elena ^d   Rochet, François ^a,b,c   Finocchi, Fabio ^a,e  

^a SORBONNE UNIVERSITÉ   (France)

^b Universit Pierre et Marie Curie Paris 6   (France)

^c SYNCHROTRON SOLEIL   (France)

^d LABORATORIO TASC   (Italy)

^e INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATIVE ADSORPTION; FIRST-PRINCIPLES SIMULATIONS; ROOM TEMPERATURE; SELF ORGANIZED STRUCTURES; SURFACE DISPLAYS; SURFACE PATTERNING; SYNCHROTRON RADIATION X-RAYS; THEORETICAL APPROACH;

ADSORPTION; DIMERS; MOLECULES; MONOMERS; PHOTOELECTRONS; SCANNING TUNNELING MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 84893306450     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp407411k     Document Type: Article

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