Low temperature growth of SiO2 films on Si(100) using a hot molecular beam of tetraethoxysilane

Chemical Physics Letters

Volumn 271, Issue 1-3, 1997, Pages 113-117

  Bonzel, H P ^a   Pirug, G ^a   Verhasselt, J ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031555966     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0009-2614(97)00414-4     Document Type: Article

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