Defect-induced dimer pinning on the Si(0 0 1) surface

Surface Science

Volumn 587, Issue 3, 2005, Pages 185-192

  Wilson, H F ^a   Marks, N A ^a   McKenzie, D R ^a  

^a UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Ab initio quantum chemical methods and calculations; Ising models; Monte Carlo simulations; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; DIMERS; FABRICATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE STRUCTURE;

AB INTIO QUANTUM CHEMICAL METHODS AND CALCULATIONS; ISING MODELS; ROOM-TEMPERATURE; SURFACE RELAXATION AND RECONSTRUCTION;

SURFACE TREATMENT;

EID: 22544448953     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.05.017     Document Type: Article

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