Isolated silicon dangling bonds on a water-saturated n+-doped Si(001)-2 × 1 surface: An XPS and STM study

Journal of Physical Chemistry C

Volumn 115, Issue 15, 2011, Pages 7686-7693

  Gallet, J J ^a   Bournel, F ^a   Rochet, F ^a   Kohler U ^b   Kubsky, S ^c   Silly, M G ^c   Sirotti, F ^c   Pierucci, D ^a,c  

^a Universit Pierre et Marie Curie Paris 6   (France)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c SYNCHROTRON SOLEIL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; BONDED MOLECULE; CORE LEVELS; MICROSCOPIC VIEWS; NEGATIVE CHARGE; NEGATIVE SURFACE CHARGES; RADICAL CHAIN REACTIONS; SI ATOMS; SI(0 0 1); SILICON DANGLING BOND; STM STUDY; STRUCTURAL ANALOGIES; XPS;

DANGLING BONDS; DEFECTS; SCANNING TUNNELING MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 79954594441     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp201262x     Document Type: Article

References (56)

1. Henderson, M. A. Surf. Sci. Rep. 2002, 46, 1-308
2. Mott, N. F.; Rigo, S.; Rochet, F.; Stoneham, A. M. Philos. Mag. Part B 1989, 60, 189-212
3. Widjaja, Y.; Musgrave, C. B. Appl. Phys. Lett. 2002, 81, 304-306
4. Ihm, K.; Kang, T.-H.; Moon, S.; Hwang, C. C.; Kim, K.-J.; Hwang, H.-N.; Jeon, C.-H.; Kim, H.-D.; Kim, B.; Park, C.-Y. J. Electron Spectrosc. Relat. Phenom. 2005, 144-147, 397-400
5. Fan, C.; Lopinski, G. P. Surf. Sci. 2010, 604, 996-1001
6. Lee, J.-Y.; Cho, J.-H. J. Phys. Chem. B 2006, 110, 18455-18458
7. Warschkow, O.; Schofield, S. R.; Marks, N. A.; Radny, M. W.; Smith, P. V.; McKenzie, D. R. Phys. Rev. B 2008, 77, 201305
8. Hamers, R. J.; Kohler, U. K. J. Vac. Sci. Technol. A 1989, 7, 2854
9. Hossain, M. Z.; Yamashita, Y.; Mukai, K.; Yoshinobu, J. Phys. Rev. B 2003, 67, 153307
10. Choi, J.-H.; Cho, J.-H. Phys. Rev. B 2009, 80, 125314
11. Tanaka, S.; Tanimura, K. Phys. Rev. B 2008, 77, 195323
12. Scanning tunneling spectroscopy (STS) shows that this defect is metallic at room temperature (ref 8 of the present paper). Two-photon photoemission, combined with STM imagery, brings also strong evidence that the C-defect is responsible for the pinning of the surface Fermi level, at least for densities above 0.05 defect/Si atom (ref 11 of the present paper)
13. Andersohn, L.; Köhler, U. Surf. Sci. 1993, 284, 77-90
14. Kato, H. S.; Akagi, K.; Tsuneyuki, S.; Kawai, M. J. Phys. Chem. C 2008, 112, 12879-12886
15. Vittadini, A.; Selloni, A.; Casarin, M. Phys. Rev. B 1995, 52, 5885-5889
16. Carniato, S.; Gallet, J.-J.; Rochet, F.; Dufour, G.; Bournel, F.; Rangan, S.; Verdini, A.; Floreano, L. Phys. Rev. B 2007, 76, 085321
17. Lenahan, P. M.; Dressendorfer, P. V. J. Appl. Phys. 1983, 54, 1457-1460
18. Lopinski, G. P.; Wayner, D. D. M.; Wolkow, R. A. Nature 2000, 406, 48
19. Liu, L.; Yu, J.; Lyding, J. W. Nanoptterning-From Ultralarge-Scale Integration to Biotechnology, MRS Symposia Proceedings 705; Materials Research Society: Pittsburgh, 2002; Y6.6.1.
20. Bellec, A.; Riedel, D.; Dujardin, G.; Boudrioua, O.; Chaput, L.; Stauffer, L.; Sonnet, P. Phys. Rev. B 2009, 80, 245434
21. Blomquist, T.; Kirczenow, G. Nano Lett. 2006, 6, 61-65
22. Pei, Y.; Ma, J. J. Phys. Chem. C 2008, 112, 16078-16086
23. Linford, M. R.; Fenter, P.; Eisenberger, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc. 1995, 117, 3145-3155
24. Miramond, C.; Vuillaume, D. J. Appl. Phys. 2004, 96, 1529-1536
25. Sze, S. M. Physics of Semiconductor Devices; Wiley Interscience: New York, 1981.
26. http://www.synchrotron-soleil.fr/portal/page/portal/Recherche/ LignesLumiere/TEMPO.
27. Note that the ion gauges in the XPS and STM chambers are not calibrated against each other.
28. Mathieu, C.; Bai, X.; Bournel, F.; Gallet, J.-J.; Carniato, S.; Rochet, F.; Sirotti, F.; Silly, M. G.; Chauvet, C.; Krizmancic, D.; Hennies, F. Phys. Rev. B 2009, 79, 205317
29. Himpsel, F. J.; McFeely, F. R.; Taleb-Ibrahimi, A.; Yarmoff, J. A.; Hollinger, G. Phys. Rev. B 1988, 38, 6084-6096
30. Landemark, E.; Karlsson, C. J.; Chao, Y.-C.; Uhrberg, R. I. G. Phys. Rev. Lett. 1992, 69, 1588-1591
31. Bozek, J. D.; Bancroft, G. M.; Cutler, J. N.; Tan, K. H. Phys. Rev. Lett. 1990, 65, 2757-2760
32. Olivero, J. J.; Longbothum, R. L. J. Quant. Spectrosc. Radiat. Transfer 1977, 17, 233-236
33. Koh, H.; Kim, J. W.; Choi, W. H.; Yeom, H. W. Phys. Rev. B 2003, 67, 073306
34. Poncey, C.; Rochet, F.; Dufour, G.; Roulet, H.; Sirotti, F.; Panaccione, G. Surf. Sci. 1995, 338, 143-156
35. Uhrberg, R. I. G.; Landemark, E.; Chao, Y. -C. J. Electron Spectrosc. Relat. Phenom. 1995, 75, 197-207
36. Martensson, P.; Cricenti, A.; Hansson, G. V. Phys. Rev. B 1986, 33, 8855-8858
37. Himpsel, F. J.; Hollinger, G.; Pollak, R. A. Phys. Rev. B 1983, 28, 7014-7018
38. Nishida, M. Appl. Phys. Lett. 2002, 81, 1827-1829
39. Gardener, J.; Owen, J. H. G.; Miki, K.; Heutz, S. Surf. Sci. 2008, 602, 843-851
40. Stroscio, J. A.; Feenstra, R. M.; Fein, A. P. Phys. Rev. Lett. 1987, 58, 1668-1671
41. Hamers, R. J. J. Vac. Sci. Technol. B 1988, 6, 1462-1467
42. Ebert, Ph. Surf. Sci. Rep. 1999, 33, 121-303
43. Brown, G. W.; Grube, H.; Hawley, M. E.; Schofield, S. R.; Curson, N. J.; Simmons, M. Y.; Clark, R. G. J. Vacuum Sci. Technol., A 2003, 21, 1506-1509
44. Haider, M. B.; Pitters, J. L.; DiLabio, G. A.; Livadaru, L.; Mutus, J. Y.; Wolkow, R. A. Phys. Rev. Lett. 2009, 102, 046805
45. 3. The band bending normal to the surface has hence little contribution to the discussion on the contrast variation around the defect.
46. Dingle, R. B. Philos. Mag. 1955, 46, 831-840
47. -3. See Sze, ref 25.
48. bias. This effect is due to an increased density of holes, considering the tip-induced band bending effect.
49. Skliar, D. B.; Willis, B. G. J. Phys. Chem. C 2008, 112, 9434-9442
50. 2, the calculation gives a still shorter O-O distance of 0.29 nm. The distance between protrusions measured by STM suggests that that H bond between hydroxyls on the same dimer is strong. See ref 16 of the present paper.
51. Larsson, C. U. S.; Johnson, A. L.; Flodstrom, A.; Madey, T. E. J. Vac. Sci. Technol.A 1987, 5, 842-846
52. Johnson, A. L.; Walczak, M. M.; Madey, T. E. Langmuir 1988, 4, 277-282
53. Takeuchi, N.; Kanai, Y.; Selloni, A. J. Am. Chem. Soc. 2004, 126, 15890-15896
54. In the case of styrene reacting with a dangling bond of the H-terminated surface, DFT calculations indicate that the radical adduct adsorption energy is 0.8 eV, less than that of reacted product (after abstraction of a nearby H), that is, 1 eV. See ref 53 of the present paper.
55. The mobility of the IDB (considered as a H or an OH vacancy) on the surface should facilitate the progress of the reaction by enabling the defect to move away from hydroxyl clusters. STM images (13) show that the IDB can change position on a dimer (on-dimer jump), but the nature of the partner is unknown (H or OH). DFT calculations (ref 15) find that both OH and H are indeed mobile via a vacancy diffusion mechanism (OH is even more mobile than H): the activation energy of OH (H) is 0.9 eV (1.1 eV) and 1.4 eV (1.6 eV) for on-dimer and intrarow jumps (on the same side of the dimer row), respectively.
56. + doping may explain the decrease of its reaction rate with 1-octadecene on H-terminated Si(111)-1 × 1, when compared to n-and p -doping (see ref 24).