An atomistic view of Si(001) homoepitaxy

Annual Review of Materials Science

Volumn 27, Issue 1, 1997, Pages 525-553

  Zhang, Zhenyu ^a   Wu, Fang ^b,c   Lagally, Max G ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c WESTERN DIGITAL CORPORATION   (United States)

Author keywords

Atomistic processes; Growth kinetics; STM; Theory

Indexed keywords

ADSORPTION; BINDING ENERGY; COMPUTATIONAL METHODS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; ETCHING; FILM GROWTH; MATHEMATICAL MODELS; NUCLEATION; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SPUTTERING;

ATOMISTIC PROCESSES;

SEMICONDUCTING SILICON;

EID: 0030651442     PISSN: 00846600     EISSN: None     Source Type: Journal    
DOI: 10.1146/annurev.matsci.27.1.525     Document Type: Article

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