SCOPUS 정보 검색 플랫폼

Volumn 6, Issue 3, 2014, Pages 1840-1847

Growth behavior and electrical performance of Ga-doped ZnO nanorod/p-Si heterojunction diodes prepared using a hydrothermal method

(4) Park, Geun Chul a Hwang, Soo Min a Lim, Jun Hyung a Joo, Jinho a

a Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDING STRUCTURES; ELECTRICAL CONDUCTIVITY; ELECTRICAL PERFORMANCE; FIELD EFFECT TRANSISTOR (FETS); HETEROJUNCTION DIODES; HYDROTHERMAL METHODS; OPTICAL AND ELECTRICAL PROPERTIES; RECTIFYING BEHAVIORS;

DIODES; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MORPHOLOGY; NANORODS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DIODES; SILICON; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 84892633138 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr04957d Document Type: Article

Times cited : (112)

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