Effect of synthesis conditions on microstructures and photoluminescence properties of Ga doped ZnO nanorod arrays

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 44, Issue 1, 2011, Pages 307-312

  Wang, Huihu ^a   Dong, Shijie ^a   Zhou, Xiaoping ^a   Hu, Xinbin ^a   Chang, Ying ^a  

^a HUBEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; GA DOPING; GA-DOPED ZNO; GALLIUM NITRATE HYDRATE; INTENSITY RATIO; MIXTURE SOLUTION; NITRATE CONCENTRATION; PEAK SHIFT; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; SILICON SUBSTRATES; SURFACE COMPOSITIONS; SYNTHESIS CONDITIONS; UV EMISSIONS; VISIBLE EMISSIONS; ZINC NITRATES; ZNO; ZNO NANOROD ARRAYS;

GALLIUM; HYDRATES; MORPHOLOGY; NANORODS; OPTICAL PROPERTIES; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 80054678660     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2011.08.029     Document Type: Article

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