Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

Materials Chemistry and Physics

Volumn 135, Issue 2-3, 2012, Pages 810-817

  Pineda Hernandez G ^a   Escobedo Morales, A ^a   Pal, U ^a   Chigo Anota, E ^a  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

Author keywords

Crystal growth; Defects; Phonons; Semiconductors

Indexed keywords

GA DOPING; GA-DOPED ZNO; GALLIUM DOPING; HEAVY DOPING; HIGH CONCENTRATION; HIGH SOLUBILITY; HYDROTHERMALLY; MORPHOLOGY EVOLUTION; RAMAN MODES; SECONDARY PHASE; UNIT CELLS; VIBRATIONAL PROPERTIES; ZNO; ZNO CRYSTALS; ZNO NANOSTRUCTURES;

CRYSTAL GROWTH; DEFECTS; GROWTH KINETICS; MORPHOLOGY; NANOSTRUCTURES; PHONONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; ZINC OXIDE;

GALLIUM;

EID: 84864711907     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.05.062     Document Type: Article

References (58)

1. J.B. Baxter, and E.S. Aydil Appl. Phys. Lett. 86 2005 053114
2. J. Zhang, Sh. Wang, M. Xu, Y. Wang, B. Zhu, Sh. Zhang, W. Huang, and Sh. Wu Cryst. Growth Des. 9 2009 3532
3. C.X. Xu, X.W. Sun, and B.J. Chen Appl. Phys. Lett. 84 2004 1540
4. H.J. Bolink, E. Coronado, and M. Sessolo Chem. Mater. 21 2009 439
5. H.Q. Le, S.K. Lim, G.K.L. Goh, S.J. Chua, N.S.S. Ang, and W. Liu Appl. Phys. B 100 2010 705
6. H.K. Liang, S.F. Yu, and H.Y. Yang Appl. Phys. Lett. 96 2010 101116
7. D. Chu, Y. Masuda, T. Ohji, and K. Kato Langmuir 24 2010 2811
8. Y.-E. Choi, J.-W. Kwak, and J.W. Park Sensors 10 2010 428
9. Ch.-L. Kuo, Ch.-L. Wang, H.-H. Ko, W.-S. Hwang, K.-M. Chang, W.-L. Li, H.-H. Huang, Y.-H. Chang, and M.-Ch. Wang Ceram. Int. 36 2010 693
10. X. Wang, Sh. Yang, J. Wang, M. Li, X. Jiang, G. Du, X. Liu, and R.P.H. Chang J. Cryst. Growth 226 2001 123
11. K. Ueda, H. Tabata, and T. Kawai Appl. Phys. Lett. 79 2001 988
12. C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E.M. Kaidashev, M. Lorenz, and M. Grundmann Appl. Phys. Lett. 83 2003 1974
13. F.X. Xiu, Z. Yang, L.J. Mandalapu, D.T. Zhao, J.L. Liu, and W.P. Beyermann Appl. Phys. Lett. 87 2005 152101
14. A. Escobedo-Morales, M. Herrera Zaldivar, and U. Pal Opt. Mater. 29 2006 100
15. H.Q. Le, S.K. Lim, and G.K.L. Goh J. Cryst. Growth 312 2010 437
16. G.K. Lau, T.S. Zhang, G.K.L. Goh, and J. Nanosci Nanotechnol. 10 2010 4733
17. M. Yan, H.T. Zhang, E.J. Widjaja, and R.P.H. Chang J. Appl. Phys. 94 2003 5240
18. L.W. Chang, J.W. Yeh, C.L. Cheng, F.S. Shieu, and H.C. Shih Appl. Surf. Sci. 257 2011 3145
19. T.P. Rao, and M.C.S. Kumar J. Alloys Compd. 506 2010 788
20. J.-Y. Tseng, Y.-T. Chen, M.-Y. Yang, Ch.-Y. Wang, P.-Ch. Li, W.-Ch. Yu, Y.F. Hsu, and S.F. Wang Thin Solid Films 517 2009 6310
21. S.-M. Park, T. Ikegami, and K. Ebihara Thin Solid Films 513 2006 90
22. Z. Yang, D.C. Look, and J.L. Liu Appl. Phys. Lett. 94 2009 072101
23. H. Chen, A. Du Pasquier, G. Saraf, J. Zhong, and Y. Lu Semicond. Sci. Technol. 23 2008 045004
24. G.-S. Park, W.-B. Choi, J.-M. Kim, Y.Ch. Choi, Y.H. Lee, and Ch.-B. Lim J. Cryst. Growth 220 2000 494
25. H.Q. Le, S.K. Lim, G.K.L. Goh, S.J. Chua, and J.X. Ong J. Electrochem. Soc. 157 2010 H796
26. K.Y. Cheong, N. Muti, and S.R. Ramanan Thin Solid Films 410 2002 142
27. N.H. Nickel, F. Friedrich, J.F. Rommeluère, and P. Galtier Appl. Phys. Lett. 87 2005 211905
28. G.K.L. Goh, C.G. Levi, J.H. Choi, and F.F. Lange J. Cryst. Growth 286 2006 457
29. JCPDS Card No. 36-1451.
30. JCPDS Card No. 41-1103.
31. J.D. Ye, S.L. Gu, S.M. Zhu, S.M. Liu, Y.D. Zheng, R. Zhang, Y. Shi, H.Q. Yu, and Y.D. Ye J. Cryst. Growth 283 2005 279
32. A.R. Babar, P.R. Deshamukh, R.J. Deokate, D. Haranath, C.H. Bhosale, and K.Y. Rajpure J. Phys. D: Appl. Phys. 41 2008 135404
33. C. Giacovazzo, H.L. Monaco, G. Artioli, D. Viterbo, G. Ferraris, G. Gilli, G. Zanotti, and M. Catti Fundamentals of Crystallography, International Union of Crystallography 2002 Oxford Science Publications USA
34. R.T. Sanderson J. Am. Chem. Soc. 105 1983 2259
35. W.-J. Li, E.-W. Shi, W.-Z. Zhong, and Z.-W. Yin J. Cryst. Growth 203 1999 186
36. R.W. Nosker, P. Mark, and J.D. Levine Surf. Sci. 19 1970 291
37. L.E. Greene, M. Law, D.H. Tan, M. Montano, J. Goldberger, G. Somorjai, and P. Yang Nano Lett. 5 2005 1231
38. G. Cao Nanostructures and Nanomaterials: Synthesis, Properties and Applications first ed. 2004 Imperial College Press London
39. M. Lucas, Z.L. Wang, and E. Riedo Phys. Rev. B 81 2010 045415
40. X. Gao, X. Li, and W. Yu J. Phys. Chem. B 109 2005 1155
41. J.J. Richardson, and F.F. Lange Cryst. Growth Des. 9 2009 2570
42. F. Li, L. Hu, Z. Li, and X. Huang J. Alloys Compd. 465 2008 L14
43. U.N. Maiti, S. Nandy, S. Karan, B. Mallik, and K.K. Chattopadhyay Appl. Surf. Sci. 254 2008 7266
44. W. Peng, Sh. Qu, G. Cong, and Zh. Wang Cryst. Growth Des. 6 2006 1518
45. A. Degen, and M. Kosec J. Eur. Ceram. Soc. 20 2000 667
46. X. Feng, L. Feng, M. Jin, J. Zhai, L. Jiang, and D. Zhu J. Am. Chem. Soc. 126 2004 62
47. A.Y.L. Sim, G.K.L. Goh, S. Tripathy, D. Andeen, and F.F. Lange Electrochim. Acta 52 2007 2933
48. D.A. Schwartz, N.S. Norberg, Q.P. Nguyen, J.M. Parker, and D.R. Gamelin J. Am. Chem. Soc. 125 2003 13205
49. J.D. Bryan, D.A. Schwartz, and D.R. Gamelin J. Nanosci. Nanotechnol. 5 2005 1472
50. C.A. Arguello, D.L. Rousseau, and S.P.S. Porto Phys. Rev. 181 1969 1351
51. H.K. Yadav, K. Sreenivas, R.S. Katiyar, and V. Gupta J. Phys. D: Appl. Phys. 40 2007 6005
52. T.C. Damen, S.P.S. Porto, and B. Tell Phys. Rev. 142 1966 570
53. J.M. Calleja, and M. Cardona Phys. Rev. B 16 1977 3753
54. X. Wang, J. Xu, X. Yu, K. Xue, J. Yu, and X. Zhao Appl. Phys. Lett. 91 2007 031908
55. A. Kaschner, H. Siegle, G. Kaczmarczyk, M. Straßburg, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, and D. Hommel Appl. Phys. Lett. 74 1999 3281
56. Y.H. Gao, Y. Bando, T. Sato, Y.F. Zhang, and X.Q. Gao Appl. Phys. Lett. 81 2002 2267
57. H.J. Chun, Y.S. Choi, S.Y. Bae, H.W. Seo, S.J. Hong, J. Park, and H. Yang J. Phys. Chem. B 107 2003 9042
58. R. Rao, A.M. Rao, B. Xu, J. Dong, S. Sharma, and M.K. Sunkara J. Appl. Phys. 98 2005 094312