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Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

Electrical transport behavior of n-ZnO nanorods/p-diamond heterojunction device at higher temperatures

(6) Sang, D D a,b Li, H D a Cheng, S H a Wang, Q L a Yu, Q a Yang, Y Z a

a JILIN UNIVERSITY (China)

b XUZHOU INSTITUTE OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED DIAMOND FILMS; CARRIER INJECTION; CHEMICAL VAPOR DEPOSITED; ELECTRICAL TRANSPORT; HETEROJUNCTION DEVICES; HETEROJUNCTION STRUCTURES; HIGH TEMPERATURE; IDEALITY FACTORS; P-N HETEROJUNCTIONS; REVERSE-SATURATION CURRENTS; TEMPERATURE DEPENDENT; ZNO;

DIAMOND FILMS; HETEROJUNCTIONS; NANORODS; VAPORS; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84865246070 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4745039 Document Type: Article

Times cited : (30)

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