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Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

Acceptor-related emissions in indium-doped ZnO nanorods

(6) Liu, Chao a He, Haiping a Sun, Luwei a Yang, Qian a Ye, Zhizhen a Chen, Lanlan b

a ZHEJIANG UNIVERSITY (China)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BLUESHIFTS; DEFECT LEVELS; DONOR-ACCEPTOR PAIRS; ENERGY LEVEL; EXCITATION SPECTRUM; FREE ELECTRON; INDIUM-DOPED ZNO; LOW TEMPERATURES; NEUTRAL ACCEPTORS; ROOM TEMPERATURE; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THERMAL QUENCHING; VAPOR TRANSPORT METHODS; YELLOW EMISSIONS;

DOPING (ADDITIVES); INDIUM; ZINC OXIDE;

NANORODS;

EID: 79953013933 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3552981 Document Type: Article

Times cited : (13)

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