Sharp semiconductor-to-metal transition of VO2 thin films on glass substrates

Journal of Applied Physics

Volumn 114, Issue 24, 2013, Pages

  Jian, Jie ^a   Chen, Aiping ^a   Zhang, Wenrui ^b   Wang, Haiyan ^a,b  

^a Department of Electrical and Computer Engineering   (United States)

^b TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK TRANSITION TEMPERATURE; ELECTRICAL RESISTANCE CHANGE; HIGH DEFECT DENSITIES; LARGE GRAIN SIZES; PHASE TRANSITION PROPERTIES; SEMICONDUCTOR-TO-METAL TRANSITIONS; SI(111) SUBSTRATE; VANADIUM DIOXIDE;

AMORPHOUS SILICON; PULSED LASER DEPOSITION; SAPPHIRE; SILICON; SUBSTRATES; THIN FILMS;

GLASS;

EID: 84891704005     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4851655     Document Type: Article

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