Growth of b-axis oriented VO 2 thin films on glass substrates using ZnO buffer layer

Applied Surface Science

Volumn 256, Issue 22, 2010, Pages 6834-6837

  Chiu, Te Wei ^b   Tonooka, Kazuhiko ^a   Kikuchi, Naoto ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

b Axis; Buffer layer; Preferential orientation; ZnO

Indexed keywords

BUFFER LAYERS; FILM GROWTH; GLASS; II-VI SEMICONDUCTORS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; SUBSTRATES; VANADIUM DIOXIDE; X RAY DIFFRACTION; ZINC OXIDE;

C AXIS ORIENTED; ELECTRICAL RESISTANCES; GLASS SUBSTRATES; INFRARED REFLECTANCE; PREFERENTIAL ORIENTATION; VARYING TEMPERATURE; X-RAY DIFFRACTION STUDIES; ZNO BUFFER LAYER;

THIN FILMS;

EID: 77955665448     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.04.097     Document Type: Article

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