Role of interfacial transition layers in VO2/Al 2O3 heterostructures

Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

  Zhou, H ^a,b   Chisholm, M F ^b   Yang, Tsung Han ^a   Pennycook, S J ^b   Narayan, J ^a  

^a North Carolina State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL REGION; INTERFACIAL TRANSITION LAYER; ORIENTATION RELATIONSHIP; SAPPHIRE SUBSTRATES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR-METAL TRANSITION; SYMMETRY MISMATCH;

EPITAXIAL FILMS; PULSED LASER DEPOSITION; SUBSTRATES;

TRANSMISSION ELECTRON MICROSCOPY;

EID: 80055020962     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3642980     Document Type: Article

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