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Volumn 103, Issue 15, 2013, Pages

Resistive switching artificially induced in a dielectric/ferroelectric composite diode

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC POTENTIAL; DIELECTRIC LAYER; EFFECTIVE APPROACHES; FERROELECTRIC CAPACITORS; INTERFACE ENGINEERING; RESISTIVE SWITCHING; THIN DIELECTRIC LAYER;

EID: 84886874344     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824214     Document Type: Article
Times cited : (54)

References (33)
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  • 30
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    • 3 device, band alignments of constituent compounds, pulsed-voltage-induced resistive switching characteristics, and impact of LFO layer thickness on endurance characteristics
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.