Rectifying behavior and transport mechanisms of currents in Pt/BaTiO 3/Nb:SrTiO 3 structure

Journal of Alloys and Compounds

Volumn 519, Issue , 2012, Pages 140-143

  Pan, R K ^a   Zhang, T J ^a   Wang, J Z ^a   Ma, Z J ^a   Wang, J Y ^a   Wang, D F ^a,b  

^a HUBEI UNIVERSITY   (China)

^b Hanyang University   (South Korea)

Author keywords

BaTiO 3 film; Current mechanism; Rectifying; Schottky barrier

Indexed keywords

AFM; C-V CURVE; CURRENT MECHANISM; CURRENT VOLTAGE CURVE; FORWARD BIAS; FOWLER-NORDHEIM; NB-DOPED SRTIO; POOLE-FRENKEL EMISSION; PULSED-LASER DEPOSITION TECHNIQUE; RECTIFYING; RECTIFYING BEHAVIORS; REVERSE BIAS; ROOM TEMPERATURE; SCHOTTKY BARRIER MODELS; SCHOTTKY BARRIERS; SINGLE CRYSTAL SUBSTRATES; SPACE-CHARGE-LIMITED CURRENT; TRANSPORT MECHANISM; TUNNELING MECHANISM; XRD;

BARIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; EPITAXIAL FILMS; LEAKAGE CURRENTS; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; STRONTIUM TITANATES;

BIAS VOLTAGE;

EID: 84862806615     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.12.146     Document Type: Article

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