Growth of Ti-O-Si mixed oxides by reactive ion-beam mixing of Ti/Si interfaces

Journal of Physics D: Applied Physics

Volumn 47, Issue 1, 2014, Pages

  Benito, Noelia ^a   Palacio, Carlos ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

ARXPS; ion beam mixing; TiSiO mixed oxides; XPS

Indexed keywords

ANGLE-RESOLVED XPS; ARXPS; CHEMICAL SPECIES; EXTERNAL SURFACES; ION BEAM MIXING; LOCAL COORDINATION; MIXED OXIDE; TI/SI INTERFACE;

INTERFACES (MATERIALS); ION BEAMS; MIXING; OXIDE FILMS; PHOTOELECTRONS; SILICON; TITANIUM DIOXIDE; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM;

EID: 84891085081     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/1/015308     Document Type: Article

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