Monitoring of an interlayer between Si(100) and a TiO2 layer formed during cyclic CVD

Chemical Vapor Deposition

Volumn 12, Issue 11, 2006, Pages 659-664

  Cho, Yong Seok ^a   Heo, Jung Shik ^a   Kim, Jeong Chan ^a   Moon, Sang Heup ^a  

^a Seoul National University   (South Korea)

Author keywords

Cyclic CVD; Gate dielectric; Interlayers; TiSiOx; Titanium dioxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITE FILMS; CONCENTRATION (PROCESS); DEPOSITION; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSCOPIC EXAMINATION; PHOTOELECTRON SPECTROSCOPY; SILICON; SILICON COMPOUNDS; TITANIUM; TITANIUM DIOXIDE;

CYCLIC CVD; DEPOSITION CYCLES; FOUR CYCLES; HIGH-RESOLUTION; HRTEM IMAGES; INITIAL CYCLES; INTERLAYERS; SHARP BOUNDARIES; SI(100); TI PRECURSORS; TISIOX; TWO LAYERS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 54949136531     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200506455     Document Type: Article

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