The formation of Ti-O tetrahedra and band gap reduction in SiO2 via pulsed ion implantation

Journal of Applied Physics

Volumn 113, Issue 10, 2013, Pages

  Green, R J ^a   Zatsepin, D A ^b,c   Hunt, A ^a   Kurmaev, E Z ^b   Gavrilov, N V ^d   Moewes, A ^a  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

^b INSTITUTE OF METAL PHYSICS   (Russian Federation)

^c URAL FEDERAL UNIVERSITY   (Russian Federation)

^d INSTITUTE OF ELECTROPHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP REDUCTION; CONDUCTION-BAND STATE; CRYSTAL FIELD THEORY; NOVEL MATERIALS; OCTAHEDRAL COORDINATION; SOFT X-RAY ABSORPTION SPECTROSCOPIES; SPECTRAL SIMULATIONS; TI ION IMPLANTATION;

CONDUCTION BANDS; ENERGY GAP; GEOMETRY; SILICA; X RAY ABSORPTION;

ION IMPLANTATION;

EID: 84875164335     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795262     Document Type: Article

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