Limits of specific contact resistivity to Si, Ge and III-V semiconductors using interfacial layers

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2013, Pages 69-72

  Shine, Gautam ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LOWERING; CONTACT RESISTIVITIES; DEPINNING; HIGH MOBILITY; II-IV SEMICONDUCTORS; INTERFACIAL LAYER; SPECIFIC CONTACT RESISTIVITY; TUNNELING TRANSPORTS;

GERMANIUM;

SEMICONDUCTOR DEVICES;

EID: 84891049559     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2013.6650576     Document Type: Conference Paper

References (20)

1. D. Connelly et al., Appl. Phys. Lett., 88, 012105 (2006).
2. A. M. Roy et al., Electron Dev. Lett., 31, 10, 1077 (2010).
3. J. Robertson, J. Vac. Sci. Technol. B, 18, 1785 (2000).
4. J. F. Wager et al., J. Appl. Phys., 109, 094501 (2011).
5. W. Mönch, Phys. Rev. Lett., 58, 12601263 (1987).
6. W. Mönch, Rep. Prog. Phys., 53, 221 (1990).
7. A. Agrawal et al., Appl. Phys. Lett., 101, 042108 (2012).
8. S. Gupta et al., J. Appl. Phys., 113, 234505 (2013).
9. A. Agrawal et al., VLSI Symp. (2013).
10. J.-Y. Lin et al., Electron Dev. Lett., 33, 11, 1541 (2012).
11. P. Paramahans et al., VLSI Symp. (2012).
12. Z. Yuan et al., Appl. Phys. Lett., 98, 172106 (2011).
13. J. Hu et al., Appl. Phys. Lett., 99, 092107 (2011).
14. J. Robertson et al., Phys. Rev. B, 83, 075205 (2011).
15. N. Stavitski et al., Electron Dev. Lett., 29, 4, 378 (2008).
16. S. L. Wright et al., Appl. Phys. Lett., 49, 1545 (1986).
17. C. Lauer et al., Semicond. Sci. Technol. 21, 1274 (2006).
18. K.-W. Ang et al., IEDM, 18. 6. 2 (2012).
19. K. Kita et al., Appl. Phys. Lett., 94, 132902 (2009).
20. J. Maassen et al., Appl. Phys. Lett., 102, 111605 (2013).