Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts

Journal of Applied Physics

Volumn 113, Issue 23, 2013, Pages

  Gupta, Shashank ^a   Paramahans Manik, Prashanth ^b   Kesh Mishra, Ravi ^b   Nainani, Aneesh ^a   Abraham, Mathew C ^a   Lodha, Saurabh ^b  

^a APPLIED MATERIALS INC   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; DIODE MEASUREMENTS; FERMI LEVEL PINNING; INTERFACIAL LAYER; LOW-RESISTANCE CONTACTS; METAL-SEMICONDUCTOR CONTACTS; PHYSICS-BASED; SN-DOPED IN;

GERMANIUM; METALS; TIN;

SEMICONDUCTOR DOPING;

EID: 84880848004     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811340     Document Type: Article

References (27)

1. C. O. Chui, H. Kim, P. McIntyre, and K. Saraswat, Tech. Dig.-Int. Electron Devices Meet. 2003, 18.3.1-18.3.4. 10.1109/IEDM.2003.1269316
2. K. W. Ang, K. J. Chui, V. Bliznetsov, A. Du, N. Balasubramanian, M. F. Li, G. Samudra, and Y.-C. Yeo, Tech. Dig.-Electron Devices Meet. 2004, 1069-1071. 10.1109/IEDM.2004.1419383
3. T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 91, 123123 (2007). 10.1063/1.2789701
4. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. 89, 252110 (2006). 10.1063/1.2410241
5. J. Kim, S. W. Bedell, S. L. Maurer, R. Loesing, and D. K. Sadana, Electrochem. Solid-State Lett. 13, H12 (2010). 10.1149/1.3257912
6. V. P. Kishore, P. Paramahans, S. Sadana, U. Ganguly, and S. Lodha, Appl. Phys. Lett. 100, 142107 (2012). 10.1063/1.3700965
7. M. Kobayashi, A. Kinoshita, K. Saraswat, H.-S. P. Wong, and Y. Nishi, J. Appl. Phys. 105, 023702 (2009). 10.1063/1.3065990
8. D. Connelly, C. Faulkner, P. A. Clifton, and D. E. Grupp, Appl. Phys. Lett. 88, 012105 (2006). 10.1063/1.2159096
9. P. Paramahans, R. K. Mishra, V. P. Kishore, P. Ray, A. Nainani, Y.-C. Huang, M. C. Abraham, U. Ganguly, and S. Lodha, Appl. Phys. Lett. 101, 182105 (2012). 10.1063/1.4764909
10. A. Agrawal, N. Shukla, K. Ahmed, and S. Datta, Appl. Phys. Lett. 101, 042108 (2012). 10.1063/1.4739784
11. A. Roy, J. Lin, and K. Saraswat, IEEE Electron Device Lett. 31, 1077 (2010). 10.1109/LED.2010.2058838
12. W. Monch, Rep. Prog. Phys. 53, 221 (1990). 10.1088/0034-4885/53/3/001
13. S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, Phys. Rev. B 15, 2154 (1977). 10.1103/PhysRevB.15.2154
14. J. F. Wager and J. Robertson, J. Appl. Phys. 109, 094501 (2011). 10.1063/1.3581159
15. P. Paramahans, S. Gupta, R. K. Mishra, N. Agarwal, A. Nainani, Y. Huang, M. Abraham, S. Kapadia, U. Ganguly, and S. Lodha, Dig. Tech. Pap.-Symp. VLSI Technol. 2012, 83-84. 10.1109/VLSIT.2012.6242472
16. C. Tejedor, F. Flores, and E. Louis, J. Phys. C 10, 2163 (1977). 10.1088/0022-3719/10/12/022
17. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984). 10.1103/PhysRevLett.52.465
18. Y.-C. Yeo, T.-J. King, and C. Hu, J. Appl. Phys. 92, 7266 (2002). 10.1063/1.1521517
19. Z. Q. Liu, W. K. Chim, S. Y. Chiam, J. S. Pan, and C. M. Ng, J. Mater. Chem. 22, 17887 (2012). 10.1039/c2jm32589f
20. J. Robertson and S. J. Clark, Phys. Rev. B 83, 075205 (2011). 10.1103/PhysRevB.83.075205
21. W. A. Hadi, S. Chowdhury, M. S. Shur, and S. K. O'Leary, J. Appl. Phys. 112, 123722 (2012). 10.1063/1.4771679
22. M. W. Allen and S. M. Durbin, Phys. Rev. B 82, 165310 (2010). 10.1103/PhysRevB.82.165310
23. L. Lin, H. Li, and J. Robertson, Appl. Phys. Lett. 101, 172907 (2012). 10.1063/1.4764521
24. W. Monch, J. Appl. Phys. 111, 073706 (2012). 10.1063/1.3699180
25. H.-K. Kim, S.-H. Han, T.-Y. Seong, and W.-K. Choi, J. Electrochem. Soc. 148, G114 (2001). 10.1149/1.1346617
26. K. Varahramyan and E. Verret, Solid-State Electron. 39, 1601 (1996). 10.1016/0038-1101(96)00091-3
27. C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, Appl. Phys. Lett. 83, 3275 (2003). 10.1063/1.1618382