A unified model for insulator selection to form ultra-low resistivity metal-insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  Agrawal, Ashish ^a   Shukla, Nikhil ^a   Ahmed, Khaled ^b   Datta, Suman ^a  

^a The Pennsylvania State University   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND OFFSET; CONTACT RESISTIVITIES; ELECTRON TRANSPORT; INSULATOR THICKNESS; LOW RESISTIVITY; METAL-INDUCED GAP STATE; METAL-INSULATOR-SEMICONDUCTOR CONTACTS; METAL-INSULATOR-SEMICONDUCTORS; PHYSICS-BASED; SPECIFIC CONTACT RESISTIVITY; TIO; TUNNEL RESISTANCE; UNIFIED MODEL; ZNO;

CADMIUM COMPOUNDS; GERMANIUM; MIS DEVICES; OHMIC CONTACTS; SEMICONDUCTING INDIUM; SILICON; TITANIUM DIOXIDE; ZINC OXIDE;

SEMICONDUCTING SILICON;

EID: 84864486958     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4739784     Document Type: Article

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